參數(shù)資料
型號(hào)： H2N4401
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 40K
代理商： H2N4401
HI-SINCERITY
MICROELECTRONICS CORP.
H2N4401
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 1/4
H2N4401
HSMC Product Specification
Description
The H2N4401 is designed for general purpose switching and amplifier
applications.
Features
Complementary to H2N4403
High Power Dissipation : 625 mW at 25
°
C
High DC Current Gain : 100-300 at 150mA
High Breakdown Voltage : 40 V Min.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).............................................................................................625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage .................................................................................................... 60 V
VCEO Collector to Emitter Voltage................................................................................................. 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
60
40
5
-
-
-
750
-
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCE=35V, VBE=0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE4
Rank
Range
A
B
100-210
190-300
TO-92
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