參數(shù)資料
型號(hào)： H2N4126
廠商： HSMC CORP.
英文描述： PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 36K
代理商： H2N4126
HI-SINCERITY
MICROELECTRONICS CORP.
H2N4126
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6216-B
Issued Date : 1992.09.22
Revised Date : 2000.09.01
Page No. : 1/3
HSMC Product Specification
Description
The H2N4126 is designed for general purpose switching and
amplifier applications.
Features
Complementary to H2N4124
High Power PT : 625mW at 25
°
C
High DC Current Gain hFE : 120-360 at I
C
=2mA
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage.................................................................................... -25 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current...................................................................................................... -200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-25
-25
-4
-
-
-
-
120
60
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-400
-950
360
-
-
4.5
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
VBE=-3V, IC=0
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, IE=0, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
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