
HI-SINCERITY
MICROELECTRONICS CORP.
H2N4124
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6240-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 1/3
HSMC Product Specification
Description
The H2N4124 is designed for general purpose switching and
amplifier applications.
Features
Complementary to H2N4126
Low Collector to Emitter Saturation Voltage
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C) .............................................................................. 350 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ 30 V
VCEO Collector to Emitter Voltage..................................................................................... 25 V
VEBO Emitter to Base Voltage............................................................................................. 5 V
IC Collector Current....................................................................................................... 200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
30
25
5.0
-
-
-
-
120
60
300
-
Max.
-
-
-
50
50
0.3
950
360
-
-
4
Unit
V
V
V
nA
nA
V
mV
Test Conditions
IC=10uA, IE=0
IC=1mA. IB=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=3V, IC=0
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=1V, IC=2mA
VCE=1V, IC=50mA
VCE=20V, IC=10mA,, f=100MHz
VCB=5V, IE=0, f=100MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF