
HI-SINCERITY
MICROELECTRONICS CORP.
H2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6240
Issued Date : 1992.11.25
Revised Date : 2002.04.03
Page No. : 1/4
H2N3906
HSMC Product Specification
Description
The H2N3906 is designed for general purpose switching and amplifier
applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -40 V
VCEO Collector to Emitter Voltage..................................................................................... -40 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-650
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-250
-400
-850
-950
-
-
300
-
-
-
4
Unit
V
V
V
nA
mV
mV
mV
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCE=-30V, VBE=-3V
IB=-1mA, IC=-10mA
IB=-5mA, IC=-50mA
IB=-1mA, IC=-10mA
IB=-5mA, IC=-50mA
VCE=-1V, IC=-100uA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA,, f=100MHz
VCB=-5V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
TO-92