
HI-SINCERITY
MICROELECTRONICS CORP.
H2N3904
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2002.04.03
Page No. : 1/4
H2N3904
HSMC Product Specification
Description
The H2N3904 is designed for general purpose switching and amplifier
applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
60
40
6
-
-
-
650
-
40
70
100
60
30
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4
Unit
V
V
V
nA
mV
mV
mV
mV
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCE=30V, VBE=3V
IB=1mA, IC=10mA
IB=5mA, IC=50mA
IB=1mA, IC=10mA
IB=5mA, IC=50mA
VCE=1V, IC=100uA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, VCE=20V, f=100MHz
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
TO-92