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參數(shù)資料
| 型號(hào)： | H2N3417 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 34K |
| 代理商： | H2N3417 |
HI-SINCERITY
MICROELECTRONICS CORP.
H2N3417
NPN SILICON TRANSISTOR
Spec. No. : HE6267-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 1/3
HSMC Product Specification
Description
The H2N3417 is a silicon NPN planar epitaxial transistor designed
for small signal general purpose and switching applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C) .............................................................................. 625 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ 50 V
VCEO Collector to Emitter Voltage..................................................................................... 50 V
VEBO Emitter to Base Voltage............................................................................................. 5 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
Min.
50
50
5
-
-
-
-
180
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
300
850
540
Unit
V
V
V
nA
nA
mV
mV
-
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IB=3mA, IC=50mA
IB=3mA, IC=50mA
VCE=4.5V, IC=2mA
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
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| H2N4401 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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