參數(shù)資料
型號(hào)： GS815218
廠商： GSI TECHNOLOGY
英文描述： 16Mb（1M x 18Bit）S/DCD Burst SRAM(16M位（1M x 18位）可選單/雙循環(huán)取消同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
中文描述： 16Mb的（100萬(wàn)x 18位）的S /雙氰胺突發(fā)靜態(tài)存儲(chǔ)器（1,600位（100萬(wàn)× 18位），可選單/雙循環(huán)取消同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器））
文件頁(yè)數(shù)： 14/38頁(yè)
文件大?。?/td> 824K
代理商： GS815218
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/38
2000, Giga Semiconductor, Inc.
Preliminary
GS815218/36/72B-225/200/180/166/150/133
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V
≤
V
DDQ
≤
2.375 V
(i.e., 2.5 V I/O) and 3.6 V
≤
V
DDQ
≤
3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case.
This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
3.
4.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–0.5 to 4.6
V
–0.5 to V
DD
V
Voltage on Clock Input Pin
–0.5 to 6
V
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/–20
mA
Output Current on Any I/O Pin
+/–20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–55 to 125
o
C
T
BIAS
Temperature Under Bias
–55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
3.135
3.3
3.6
V
I/O Supply Voltage
V
DDQ
2.375
2.5
V
DD
V
1
Input High Voltage
V
IH
1.7
—
V
DD
+0.3
V
2
Input Low Voltage
V
IL
–0.3
—
0.8
V
2
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
3
Ambient Temperature (Industrial Range Versions)
T
A
–40
25
85
°
C
3
相關(guān)PDF資料
PDF描述
GS815236 16Mb（512K x 36Bit）S/DCD Sync Burst SRAM(16M位（512K x 36位）可選單/雙循環(huán)取消同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS815272 16Mb（256K x 72Bit）S/DCD Sync Burst SRAM(16M位（256K x 72位）可選單/雙循環(huán)取消同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS8152Z18 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8152Z36 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8152Z72 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS815V018AB-250 制造商:GSI Technology 功能描述:GS815V018AB-250 - Trays
GS815V018AB-250I 制造商:GSI Technology 功能描述:GS815V018AB-250I - Trays
GS815V018AB-300 制造商:GSI Technology 功能描述:GS815V018AB-300 - Trays
GS815V018AB-300I 制造商:GSI Technology 功能描述:GS815V018AB-300I - Trays
GS815V018AB-333 制造商:GSI Technology 功能描述:GS815V018AB-333 - Trays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*