參數(shù)資料
型號: GM72V66841ET
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個銀行同步動態(tài)RAM
文件頁數(shù): 34/57頁
文件大小: 592K
代理商: GM72V66841ET
LG Semicon
GM72V66841CT/CLT
Bank Active Command Interval
1.
Same bank:
The interval between the two
bank-active commands must be no less than
t
RC
.
2. In the case of different bank-active
commands:
The interval between the bank-
active commands must be no less than
t
RRD
.
33
Bank Active to Bank Active Command Interval for Same Bank
CLK
Command
BS(A12/A13)
Address
(A0-A11)
Bank 0
Active
ACTV
ROW
ROW
ACTV
Bank 0
Active
t
RC
Bank Active to Bank Active for different bank
CLK
Command
BS(A12/A13)
t
RRD
Address
(A0-A11)
Bank 0
Active
Bank 3
Active
ACTV
ROW:0
ACTV
ROW:1
相關(guān)PDF資料
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GM72V66841Exx 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
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參數(shù)描述
GM72V66841ET-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-75 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
GM72V66841ET-7J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
GM72V66841ET-7K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM