參數(shù)資料
型號: GM72V66841ET
廠商: Hynix Semiconductor Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個銀行同步動態(tài)RAM
文件頁數(shù): 24/57頁
文件大?。?/td> 592K
代理商: GM72V66841ET
LG Semicon
GM72V66841CT/CLT
CLK
DQ(output)
in
in
Command
l
BSW
= 0
cycle
Burst Length = full page
Burst stop command at burst write:
The burst
stop command (BST command) is used to stop
data input during a full-page burst write. No data
is written in the same cycle as the BST
command, and in subsequent cycles.
In addition, the BST command is only valid
during full-page burst mode, and is invalid with
burst lengths of 1, 2, 4, and 8. And an interval of
t
RWL
is required between the last data-in and the
next Precharge command.
BST
PRE/PALL
t
RWL
23
相關PDF資料
PDF描述
GM72V66841Exx 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
GM72V66841ET-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-75 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
GM72V66841ET-7J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
GM72V66841ET-7K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM