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參數(shù)資料
| 型號： | GFP65N02 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直|第65A條（?。﹟ TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 98K |
| 代理商： | GFP65N02 |
GFP65N02
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25
°
C unless otherwise noted)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
Fig. 8
–
Capacitance
C
iss
C
rss
C
oss
f = 1MH
Z
V
GS
= 0V
0
2
4
6
8
10
0
10
20
30
40
Fig. 7
–
Gate Charge
V
DS
= 10V
I
D
= 32A
1
0.3
10
100
0.5
0.7
0.9
1.1
1.3
1.5
T
J
= 125
°
C
Fig. 9
–
Source-Drain Diode
Forward Voltage
25
°
C
--55
°
C
V
GS
= 0V
I
S
V
SD
-- Source-to-Drain Voltage (V)
Q
g
-- Charge (nC)
V
G
C
V
DS
-- Drain-to-Source Voltage (V)
Fig. 12
–
Maximum Safe Operating Area
0.0001
0.001
0.01
0.01
0.1
0.1
1
1
10
I
D
V
DS
-- Drain-Source Voltage (V)
Fig. 10
–
Thermal Impedance
R
Θ
J
I
Pulse Duration (sec.)
0.001
0.0001
0.01
0.1
0
0.1
1
1
10
100
1000
10
100
200
400
600
800
1000
1
10
Fig. 11
–
Power vs. Pulse Duration
P
Pulse Duration (sec.)
Single Pulse
R
θ
JC
= 2.2
°
C/W
T
C
= 25
°
C
V
GS
= 10V
Single Pulse
R
θ
= 2.2
C/W
T
C
= 25
°
C
R
DS(ON
Lmt
100
μ
s
1ms
10ms
DC
D = 0.5
0.2
0.1
t
1
t
2
P
DM
1. Duty Cycle, D = t
1
/t
2
2. R
θ
JC
(t) = R
θ
JC(norm)
*R
θ
JC
3. R
θ
JC
= 2.2
°
C/W
4. T
J
- T
C
= P
DM
* R
θ
JC
(t)
0.05
100ms
0.02,
Single Pulse
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