參數(shù)資料
型號(hào): GFP65N02
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 65A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 20V的五(巴西)直|第65A條(?。﹟ TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 98K
代理商: GFP65N02
GFP65N02
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Test Condition
Min
Typ
Max
Unit
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 16V, V
GS
= 0V
V
DS
=16V, V
GS
=0V, T
J
=125°C
V
DS
5V, V
GS
= 10V
V
GS
= 10V, I
D
= 32A
V
GS
= 4.5V, I
D
= 25A
V
DS
= 10V, I
D
= 32A
20
0.8
65
V
2.5
±100
1
10
8.5
13.5
nA
Zero Gate Voltage Drain Current
I
DSS
μ
A
On-State Drain Current
(1)
I
D(on)
A
Drain-Source On-State Resistance
(1)
R
DS(on)
6.5
10.5
40
m
Forward Transconductance
(1)
Dynamic
g
fs
S
Total Gate Charge
(1)
Q
g
V
DS
=10V, V
GS
=4.5V, I
D
=32A
19.5
38
6.5
8.5
12
11
53
21
1920
568
369
30
60
20
20
80
40
Gate-Source Charge
(1)
Gate-Drain Charge
(1)
Turn-On Delay Time
(1)
Rise Time
(1)
Turn-Off Delay Time
(1)
Fall Time
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Max. Pulsed Diode Forward Current
(2)
Diode Forward Voltage
(1)
Reverse Recovery Time
(1)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
= 10V, V
GS
= 10V
I
D
= 32A
nC
V
DD
= 10V, I
D
= 1A
V
GEN
= 10V
R
G
= 6
ns
V
DS
= 10V, V
GS
= 0V
f = 1.0MH
Z
pF
I
S
I
SM
V
SD
t
rr
45
150
1.3
A
A
V
ns
I
S
= 25A, V
GS
= 0V
0.9
60
Peak Reverse Recovery Current
(1)
Reverse Recovery Charge
(1)
I
RRM
Q
rr
I
F
= 40A, di/dt = 100A/
μ
s
1.15
37
A
nC
Note:
(1) Pulse test; pulse width
300
μ
s, duty cycle
2%
(2) Pulse width limited by maximum junction temperature
G
D
S
V
IN
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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