參數(shù)資料
型號(hào)： GB100DA60UP
廠商： VISHAY SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： TRANSISTOR 125 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor
中文描述： IGBT Transistors 600 Volt 100 Amp Warp 2 Speed
文件頁(yè)數(shù)： 7/10頁(yè)
文件大?。?/td> 182K
代理商： GB100DA60UP
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
Document Number: 93001
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
7
Fig. 18b - Switching Loss Waveforms Test Circuit
ORDERING INFORMATION TABLE
t = 5 μs
t
d(on)
t
f
t
r
90 %
t
d(off)
10 %
90 %
10 %
5 %
V
C
I
C
E
on
E
off
E
ts
= (E
on
+ E
off
)
1
2
3
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Insulated Gate Bipolar Transistor (IGBT)
B = IGBT Generation 5
Current rating (100 = 100 A)
Circuit configuration (D = Single switch with antiparallel diode)
Package indicator (A = SOT-227)
Voltage rating (60 = 600 V)
Speed/type (U = Ultrafast IGBT)
8
-
Totally lead (Pb)-free
Device code
5
1
3
2
4
6
7
8
G
B
100
D
A
60
U
P
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GB100TS60NPBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:INT-A-PAK 'Half-Bridge' (Ultrafast Speed IGBT), 108 A
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GB101 制造商:JAMECO VALUEPRO 功能描述:MYLAR CAPACITOR GRAB BAG
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