參數(shù)資料
型號(hào)： GB100DA60UP
廠商： VISHAY SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： TRANSISTOR 125 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor
中文描述： IGBT Transistors 600 Volt 100 Amp Warp 2 Speed
文件頁(yè)數(shù)： 4/10頁(yè)
文件大小： 182K
代理商： GB100DA60UP
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 93001
Revision: 22-Jul-10
Fig. 5 - Typical Diode Forward Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5
, V
GE
= 15 V
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
= 360 V,
R
g
= 5
, V
GE
= 15 V
0
0.5
1
1.5
2
2.5
0
50
100
150
200
Tj = 25°C
Tj = 125°C
V
FM
(V)
I
F
100
200
300
400
500
600
0.0001
0.001
0.01
0.1
1
10
TJ= 125°C
TJ = 25°C
V
CES
(V)
I
C
0.0002
0.0004
0.0006
0.0008
0.001
2
2.5
3
3.5
4
4.5
TJ= 125°C
TJ = 25°C
I
C
(mA)
V
g
20
40
60
80
100
120
140
160
0
0.5
1
1.5
2
2.5
3
3.5
4
27 A
75 A
100 A
T
J
(°C)
V
C
10
30
50
70
90
110
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
EON
EOFF
I
C
(A)
E
0
20
40
60
80
100
120
10
100
1000
tR
tdOFF
tF
tdON
I
C
(A)
S
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