參數(shù)資料
型號(hào)： GB100DA60UP
廠商： VISHAY SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： TRANSISTOR 125 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor
中文描述： IGBT Transistors 600 Volt 100 Amp Warp 2 Speed
文件頁數(shù)： 3/10頁
文件大小： 182K
代理商： GB100DA60UP
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
Document Number: 93001
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
3
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage temperature
range
T
J
, T
Stg
- 40
-
150
°C
Junction to case
IGBT
R
thJC
-
-
0.28
°C/W
Diode
-
-
0.4
Case to sink per module
R
thCS
-
0.05
-
Mounting torque, 6-32 or M3 screw
-
-
1.3
Nm
Weight
-
30
-
g
Continuous collector current, I
C
(A)
A
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
160
V
CE
(V)
I
C
1
10
100
1000
0
1
10
100
1000
0
1
2
3
4
5
0
50
100
150
200
Tj = 25°C
Tj = 125°C
V
CE
(V)
I
0
20
40
60
80 100 120 140 160 180
0
20
40
60
80
100
120
140
160
Continuous forward current, I
F
(A)
A
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