參數(shù)資料
型號(hào)： GB100DA60UP
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： TRANSISTOR 125 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor
中文描述： IGBT Transistors 600 Volt 100 Amp Warp 2 Speed
文件頁(yè)數(shù)： 5/10頁(yè)
文件大?。?/td> 182K
代理商： GB100DA60UP
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
Document Number: 93001
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
5
Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 100 A, L = 500 μH,
V
CC
= 360 V, V
GE
= 15 V
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
I
C
= 100 A, V
GE
= 15 V
Fig. 13 - Typical t
rr
diode vs. dI
F
/dt
V
RR
= 200 V, I
F
= 50 A
Fig. 14 - Typical I
rr
diode vs. dI
F
/dt
V
RR
= 200 V, I
F
= 50 A
Fig. 15 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
0
10
20
30
40
50
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
EON
EOFF
R
G
(
Ω
)
E
0
10
20
30
40
50
10
100
1000
tR
tdOFF
tF
tdON
R
G
(
Ω
)
S
100
1000
50
70
90
110
130
150
170
190
210
TJ= 125°C
TJ = 25°C
dI
F
/dt (A/μs)
t
r
100
1000
0
5
10
15
20
25
30
35
40
TJ= 125°C
TJ = 25°C
dI
F
/dt (A/μs)
I
r
Z
t
Rectangular pulse duration (t1)
1E-005
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
0.20
0.10
0.05
D = 0.50
0.01
0.02
SINGLE PULSE
( THERMAL RESPONSE )
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