參數(shù)資料
型號： GB100DA60UP
廠商： VISHAY SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： TRANSISTOR 125 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor
中文描述： IGBT Transistors 600 Volt 100 Amp Warp 2 Speed
文件頁數(shù)： 2/10頁
文件大?。?/td> 182K
代理商： GB100DA60UP
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 93001
Revision: 22-Jul-10
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown
voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA
600
-
-
V
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 100 A
-
2.4
2.8
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C
-
3
3.4
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA
3
3.9
5
Temperature coefficient of
threshold voltage
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
-
- 10
-
mV/°C
Collector to emitter leakage current
I
CES
V
GE
= 0 V, V
CE
= 600 V
-
7
100
μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
-
4
10
mA
Forward voltage drop
V
FM
I
C
= 100 A, V
GE
= 0 V
-
1.6
2.1
V
I
C
= 100 A, V
GE
= 0 V, T
J
= 125 °C
-
1.7
2
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
-
-
± 200
nA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Q
g
I
C
= 100 A, V
CC
= 480 V, V
GE
= 15 V
-
460
690
nC
Gate to emitter charge (turn-on)
Q
ge
-
160
250
Gate to collector charge (turn-on)
Q
gc
-
70
130
Turn-on switching loss
E
on
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
-
0.36
-
mJ
Turn-off switching loss
E
off
-
1.42
-
Total switching loss
E
tot
-
1.78
-
Turn-on switching loss
E
on
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 125 °C
-
0.52
-
Turn-off switching loss
E
off
-
1.6
-
Total switching loss
E
tot
-
2.12
-
Turn-on delay time
t
d(on)
-
264
-
ns
Rise time
t
r
-
54
-
Turn-off delay time
t
d(off)
-
257
-
Fall time
t
f
-
80
-
Reverse bias safe operating area
RBSOA
T
J
= 150 °C, I
C
= 300 A, R
g
= 22
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
P
= 600 V, L = 500 μH
Fullsquare
Diode reverse recovery time
t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
-
95
120
ns
Diode peak reverse current
I
rr
-
10
13
A
Diode recovery charge
Q
rr
-
480
780
nC
Diode reverse recovery time
t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
-
144
185
ns
Diode peak reverse current
I
rr
-
16
19
A
Diode recovery charge
Q
rr
-
1136
1758
nC
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