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參數(shù)資料
| 型號： | FGH60N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 175K |
| 代理商： | FGH60N6S2 |
2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
I
C
,
0
25
50
3.5
4.5
5.0
5.5
8.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6.0
75
150
175
3.0
125
100
200
4.0
6.5
7.0
7.5
T
J
= -55
o
C
T
J
= 25
o
C
PULSE DURATION = 250μs
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
4
8
12
20
40
60
80
0
14
16
100
120
140
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1mA, R
L
= 7.5
I
CE
= 20A
0
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
125
25
150
5
E
T
,
4
I
CE
= 80A
I
CE
= 40A
1
R
G
= 3
, L = 100
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
1000
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 20A
I
CE
= 40A
I
CE
= 80A
T
J
= 125
o
C, L = 100
μ
H, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
20
40
0.01
0.1
10
1
C
OES
C
IES
60
80
100
FREQUENCY = 1MHz
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.6
9
1.8
8
10
11
12
16
2.0
2.2
V
C
,
I
CE
= 20A
2.4
7
13
14
15
2.6
2.8
DUTY CYCLE < 0.5%
PULSE DURATION = 250
μ
s
I
CE
= 40A
I
CE
= 60A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGH60N6S2 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH75N60SF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
| FGH75N60SFTU | 功能描述:IGBT 晶體管 N-CH/75A 600V FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH75N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
| FGH75N60UFTU | 功能描述:IGBT 晶體管 N-CH / 600V 75A FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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