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參數(shù)資料
| 型號： | FGH60N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 175K |
| 代理商： | FGH60N6S2 |
2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
E
O
,
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1.0
2.0
0
10
20
40
60
80
0
3.0
2.5
0.5
4.0
R
G
= 3
, L = 100μH, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
30
50
70
3.5
E
O
0.50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0.25
0.75
0.0
2.00
1.75
1.00
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
10
20
40
60
80
0
30
50
70
1.50
1.25
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
14
16
22
26
30
10
20
40
60
80
0
30
50
70
12
18
20
24
28
32
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
60
20
90
80
40
10
20
40
60
80
0
30
50
70
50
10
70
30
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
60
20
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
100
80
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
120
10
20
40
60
80
0
30
50
70
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
30
50
70
90
10
20
40
60
80
0
30
50
70
40
60
80
R
G
= 3
, L = 100
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGH60N6S2 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH75N60SF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
| FGH75N60SFTU | 功能描述:IGBT 晶體管 N-CH/75A 600V FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH75N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
| FGH75N60UFTU | 功能描述:IGBT 晶體管 N-CH / 600V 75A FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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