參數(shù)資料
型號(hào): FF1N30HS60DD
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 30A, 600V Stealth Diode
中文描述: 30 A, 600 V, SILICON, RECTIFIER DIODE
封裝: SOT-227, 4 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 166K
代理商: FF1N30HS60DD
2003 Fairchild Semiconductor Corporation
FFH1N30HS60DD RevA
F
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
Figure 8. Reverse Recovered Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse
Voltage
Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
dI
F
/dt, CURRENT RATE OF CHANGE (A/μs)
0.5
1.0
1.5
2.0
2.5
V
R
= 390V, T
J
= 125
o
C
I
F
= 60A
I
F
= 30A
I
F
= 15A
S
1000
1600
1400
400
200
600
800
1200
2.25
1.75
1.25
0.75
dI
F
/dt, CURRENT RATE OF CHANGE (A/μs)
200
400
600
800
1000
1200
V
R
= 390V, T
J
= 125
o
C
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
R
,
1000
1600
1400
400
200
600
800
1200
400
0
800
600
200
1000
V
R
, REVERSE VOLTAGE (V)
C
J
,
0.1
1
100
10
I
F
,
T
C
, CASE TEMPERATURE
0
5
10
15
20
35
25
30
145
175
165
115
105
125
135
155
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
θ
J
,
T
0.01
10
-4
10
-3
10
0
0.1
10
1
1.0
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
2.0
0.001
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