參數(shù)資料
型號： FF1N30HS60DD
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 參考電壓二極管
英文描述： 30A, 600V Stealth Diode
中文描述： 30 A, 600 V, SILICON, RECTIFIER DIODE
封裝： SOT-227, 4 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 166K
代理商： FF1N30HS60DD
2003 Fairchild Semiconductor Corporation
FFH1N30HS60DD RevA
F
Package Marking and Ordering Information
Electrical Characteristics
(per diode)
T
C
= 25
°
C unless otherwise noted
Off State Characteristics
I
R
Instantaneous Reverse Current
On State Characteristics
V
F
Instantaneous Forward Voltage
Dynamic Characteristics
C
J
Junction Capacitance
Switching Characteristics
t
rr
Reverse Recovery Time
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient SOT-227
Device Marking
FF1N30HS60DD
Device
Package
SOT-227
Tape Width
-
Quantity
10
FF1N30HS60DD
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
R
= 600V
T
C
= 25
°
C
T
C
= 125
°
C
-
-
-
-
100
1.0
μ
A
mA
I
F
= 30A
T
C
= 25
°
C
T
C
= 125
°
C
-
-
2.1
1.7
2.4
2.1
V
V
V
R
= 10V, I
F
= 0A
-
120
-
pF
I
F
= 1A, dI
F
/dt = 100A/
μ
s, V
R
= 30V
I
F
= 30A, dI
F
/dt = 100A/
μ
s, V
R
= 30V
I
F
= 30A,
dI
F
/dt = 200A/
μ
s,
V
R
= 390V, T
C
= 25
°
C
-
-
-
-
-
-
-
-
-
-
-
-
27
36
36
2.9
55
110
1.9
6
450
60
1.25
21
730
800
35
45
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
t
rr
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
b
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
dI
M
/dt
I
F
= 30A,
dI
F
/dt = 200A/
μ
s,
V
R
= 390V,
T
C
= 125
°
C
A
nC
ns
I
F
= 30A,
dI
F
/dt = 1000A/
μ
s,
V
R
= 390V,
T
C
= 125
°
C
A
nC
A/μs
-
-
-
-
-
1.1
12
°
C/W
°
C/W
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參數(shù)描述
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