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參數(shù)資料
| 型號： | FDZ209N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel PowerTrench BGA MOSFET |
| 中文描述： | 4 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-12 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 172K |
| 代理商： | FDZ209N |
FDZ209N Rev B2 (W)
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Off Characteristics
BV
DSS
Drain
–Source Breakdown Voltage V
GS
= 0 V,
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage.
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
g
FS
Forward Transconductance
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
Drain
–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain
–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
Notes:
1.
R
is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θ
JB
, is defined for reference. For R
θ
JC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θ
JC
and R
θ
JB
are guaranteed by design while R
θ
JA
is determined by the user's board design.
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
Single Pulse,
I
D
= 4 A
V
DD
= 30 V,
90
4
mJ
A
I
D
= 250
μ
A
60
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
59
mV/
°
C
V
DS
= 48 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
±
100
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 5 V,
V
GS
= 5 V, I
D
= 4 A, T
J
=125
°
C
V
DS
= 5 V,
I
D
= 250
μ
A
1
2.5
–6
3
V
Gate Threshold Voltage
mV/
°
C
I
= 4 A
60
91
12
80
130
m
S
I
D
= 4 A
657
76
32
1.5
pF
pF
pF
V
DS
= 30 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
18
4
15
8
6.3
2.5
2.5
32
8
27
16
9
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V,
V
GS
= 5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 30 V,
V
GS
= 5 V
I
D
= 4 A,
1.7
1.2
A
V
V
GS
= 0 V,
I
S
= 1.7 A
(Note 2)
0.77
27
45
nS
nC
I
F
= 4A
d
iF
/d
t
= 100 A/μs
(Note 2)
a)
64°C/W when
mounted on a 1in
2
pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
128°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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