參數(shù)資料
型號(hào)： FDZ2554PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET
中文描述： 6.5 A, 20 V, 0.028 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝： BGA-18
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 149K
代理商： FDZ2554PZ
August 2004
FDZ2554PZ
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench
BGA MOSFET
2004 Fairchild Semiconductor Corporation
FDZ2554PZ Rev. C3 (W)
General Description
Combining
PowerTrench
packaging, the FDZ2554PZ minimizes both PCB space
and R
. This monolithic common drain BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
Fairchild’s
process
advanced
with
2.5V
specified
BGA
state-of-the-art
Applications
Battery management
Load switch
Battery protection
Features
–6.5 A, –20 V. R
DS(ON)
= 28 m
@ V
GS
= –4.5 V
R
DS(ON)
= 45 m
@ V
GS
= –2.5 V
>4800V ESD Protection
Occupies only 0.10 cm
2
of PCB area:
1/3 the area of SO-8
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
significantly better than SO-8
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability
Q2
Q1
Pin 1
G
S
D
D
S
S
S
D
S
S
S
S
G
S
S
D
D
D
Bottom
Pin 1
F
Top
S
S
G
G
D
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–6.5
–20
2.1
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
60
6.3
0.6
°
C/W
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
2554Z
FDZ2554PZ
Reel Size
7’’
Tape width
12mm
Quantity
3000 units
F
相關(guān)PDF資料
PDF描述
FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench
FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET
FDZ293P P-Channel 2.5 V Specified PowerTrench BGA MOSFET
FDZ294N N-Channel 2.5 V Specified PowerTrench BGA MOSFET
FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDZ2554PZ_Q 功能描述:MOSFET 20/12V P-Ch Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ27064N 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ291P 功能描述:MOSFET -20V P-Ch 1.5V Spec PwrTrench BGA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ291P_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
FDZ293P 功能描述:MOSFET 2.5V PCH BGA 1.5x1.5 SPECIFIED POWRTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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