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參數(shù)資料
| 型號： | FDZ2553N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench |
| 中文描述： | 9.6 A, 20 V, 0.014 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-18 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 199K |
| 代理商： | FDZ2553N |
February 2003
2003 Fairchild Semiconductor Corporation
FDZ2553N Rev D2 (W)
FDZ2553N
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining
PowerTrench
packaging, the FDZ2553N minimizes both PCB space
and R
. This Monolithic Common Drain BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
Fairchild’s
process
advanced
with
2.5V
specified
BGA
state-of-the-art
Applications
Battery management
Load switch
Battery protection
Features
9.6 A, 20 V.
R
DS(ON)
= 14 m
@ V
GS
= 4.5 V
R
DS(ON)
= 20 m
@ V
GS
= 2.5 V
Occupies only 0.10 cm
2
of PCB area:
1/3 the area of SO-8.
Ultra-thin package: less than 0.80 mm height when
mounted to PCB.
Outstanding thermal transfer characteristics:
significantly better than SO-8.
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability
Q2
Q1
Pin 1
G
S
D
D
S
S
S
D
S
S
S
S
G
S
S
D
D
D
Bottom
Pin 1
Top
Q2
Q1
S
S
G
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
9.6
20
2.1
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
60
6.3
0.6
°
C/W
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
2553N
FDZ2553N
Reel Size
7’’
Tape width
12mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ2553N_Q | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ_Q | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2554P | 功能描述:MOSFET 20V/12V PCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2554P_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET |
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