參數(shù)資料
型號(hào)： FDZ201N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： CAP CER 4.7UF 16V 10% X5R 1210
中文描述： 9 A, 20 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ULTRA THIN, BGA-12
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 37K
代理商： FDZ201N
November 1999
ADVANCE INFORMATION
FDZ201N
N-Channel 2.5V Specified PowerTrench
TM
BGA MOSFET
1999 Fairchild Semiconductor Corporation
FDZ201N Rev A (W)
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ201N minimizes both PCB space
and R
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild’s
advanced
2.5V
specified
Applications
=
Battery management
=
Load switch
=
Battery protection
Features
=
9 A, 20 V.
R
DS(ON)
= 0.018
=
@ V
GS
= 4.5 V
R
DS(ON)
= 0.030
@ V
GS
= 2.5 V.
=
Occupies only 5 mm
2
of PCB area.
Only 55% of the area of SSOT-6
=
Ultra-thin package: less than 0.70 mm height when
mounted to PCB
=
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
=
Ultra-low Q
g
x R
DS(ON)
figure-of-merit.
=
High power and current handling capability.
Pin 1
G
S
S
S
D
D
D
S
S
D
D
D
Bottom
F
Pin 1
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
stg
Operating and Storage Junction Temperature Range
Ratings
20
±
12
9
20
2.7
-55 to +175
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
55
12
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
F201
FDZ201N
Reel Size
TBD
Tape width
TBD
Quantity
TBD
F
相關(guān)PDF資料
PDF描述
FDZ202P P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ204P P-Channel 2.5V Specified PowerTrench
FDZ206P P-Channel 2.5V Specified PowerTrench
FDZ208P P-Channel 30 Volt PowerTrench
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDZ201N_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ201N_Q 功能描述:MOSFET 20V/12V NChannel BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ202P 功能描述:MOSFET 20V/12V P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ202P_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ202P_Q 功能描述:MOSFET 20V/12V P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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