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參數(shù)資料
| 型號： | FDZ203N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel 2.5V Specified PowerTrench BGA MOSFET |
| 中文描述： | 7.5 A, 20 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-9 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 208K |
| 代理商： | FDZ203N |
March 2003
2003 Fairchild Semiconductor Corporation
FDZ203N Rev. E2(W)
FDZ203N
N-Channel 2.5V Specified PowerTrench
BGA MOSFET
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ203N minimizes both PCB space
and R
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild’s
advanced
2.5V
specified
Applications
Battery management
Load switch
Battery protection
Features
7.5 A, 20 V.
R
DS(ON)
= 18 m
@ V
GS
= 4.5
R
DS(ON)
= 30 m
@ V
GS
= 2.5 V
Occupies only 4 mm
2
of PCB area.
Less than 40% of the area of a SSOT-6
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Ultra-low Q
g
x R
DS(ON)
figure-of-merit.
High power and current handling capability.
S
G
S
S
S
S
D
D
D
Bottom
Pin 1
F
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
7.5
20
1.6
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
67
11
1
°
C/W
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
203N
FDZ203N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ203N_Q | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2040L | 功能描述:電源開關(guān) IC - 配電 N-Ch 60V 100A 3mOhm PowerTrench MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| FDZ204P | 功能描述:MOSFET 20V/12V P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ204P_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench BGA MOSFET |
| FDZ204P_Q | 功能描述:MOSFET 20V/12V P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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