參數(shù)資料
型號(hào)： FDZ204P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： P-Channel 2.5V Specified PowerTrench
中文描述： 4.5 A, 20 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ULTRA THIN, BGA-9
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 195K
代理商： FDZ204P
March 2003
2003 Fairchild Semiconductor Corporation
FDZ204P Rev. D2 (W)
FDZ204P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ204P minimizes both PCB space
and R
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild
’s
advanced
2.5V
specified
Applications
Battery management
Load switch
Battery protection
Features
–4.5 A, –20 V. R
DS(ON)
= 45 m
@ V
GS
= –4.5 V
R
DS(ON)
= 75 m
@ V
GS
= –2.5 V
Occupies only 4 mm
2
of PCB area.
Less than 40% of the area of a SSOT-6
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Ultra-low Q
g
x R
DS(ON)
figure-of-merit.
High power and current handling capability.
S
G
S
S
S
S
D
D
D
Bottom
Pin 1
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–4.5
–20
1.8
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
67
11
1
°
C/W
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
204P
FDZ204P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
F
相關(guān)PDF資料
PDF描述
FDZ206P P-Channel 2.5V Specified PowerTrench
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FDZ209N 60V N-Channel PowerTrench BGA MOSFET
FDZ2551N Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FDZ2552P Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDZ204P_04 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ204P_Q 功能描述:MOSFET 20V/12V P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ206P 功能描述:MOSFET 20V/12V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ206P_Q 功能描述:MOSFET 20V/12V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ208P 功能描述:MOSFET 30V/25V PCh MOSFET BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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