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參數(shù)資料
| 型號： | FDS9934C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N- and P-Channel enhancement mode power field effect transistors |
| 中文描述： | 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 158K |
| 代理商： | FDS9934C |
FDS9934C Rev C(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A, Referenced to 25
°
C
V
DS
= 16V,
V
GS
= 0 V
V
DS
= –16V,
V
GS
= 0 V
V
GS
= ±8 V,
V
DS
= 0 V
V
GS
= ±12 V,
V
DS
= 0 V
I
D
= 250 μA
I
D
= –250 μA
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
20
–20
V
Breakdown Voltage
14
–14
mV/
°
C
1
–1
±100
±100
μ
A
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 250 uA, Referenced to 25°C
I
D
= 250 uA, Referenced to 25°C
V
GS
= 4.5 V,
I
D
= 6.5 A
V
GS
= 2.5 V,
I
D
= 5.4 A
V
GS
= 4.5 V, I
D
=6.5A, T
J
=125
°
C
V
GS
= –4.5 V, I
D
= –3.2 A
V
GS
= –2.5 V, I
D
= –1.0 A
V
GS
= –4.5 V,I
D
= –3.2 A, T
J
=125
°
C
V
GS
= 4.5V, V
DS
= 5 V
V
GS
= –4.5 V, V
DS
= – 5 V
V
DS
= –5 V,
I
D
= 6.5 A
V
DS
= 5 V,
I
D
= – 5.5 A
I
D
= 250 μA
I
D
= 250 μA
Q1
Q2
Q1
Q2
Q1
0.6
–0.8
1
–1
1.5
–1.5
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
–3
3
25
35
35
43
64
55
mV/
°
C
30
43
50
55
90
76
m
Q2
m
I
D(on)
On-State Drain Current
Q1
Q2
Q1
Q2
15
–16
A
g
FS
Forward Transcoductance
22
14
S
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
650
955
150
215
85
115
1.4
4.9
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
Q1
V
= 10V,
f = 1.0 MHz
Q2
V
= –10 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
GS
= 0 V,
V
GS
= 0 V,
pF
R
G
Gate Resistance
f = 1.0 MHz
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS9934C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS9936 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS9936A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS9945 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes |
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