參數(shù)資料
型號: FDS9953A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual 30V P-Channel PowerTrench MOSFET
中文描述: 2.9 A, 30 V, 0.13 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 1/6頁
文件大?。?/td> 73K
代理商: FDS9953A
May 2001
FDS9953A
Dual 30V P-Channel PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDS9953A Rev B(W)
General Description
This PChannel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–2.9 A, –30 V
R
DS(ON)
= 130 m
@ V
GS
= –10 V
R
DS(ON)
= 200 m
@ V
GS
= –4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
S
SO-8
D
D
D2
D2
D1D1
S2
G2S1G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–30
±
25
±
2.9
±
10
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS9953A
FDS9953A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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