參數(shù)資料
型號(hào): FDS9936A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 5.5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SOIC-8
文件頁數(shù): 1/8頁
文件大小: 416K
代理商: FDS9936A
May 1998
FDS9936A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS9936A
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
5.5
A
- Pulsed
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS9936A Rev.B
5.5 A, 30 V. R
DS(ON)
= 0.040
@ V
GS
= 10 V,
R
DS(ON)
= 0.060
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
9936A
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
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