參數(shù)資料
型號(hào): FDS9934C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N- and P-Channel enhancement mode power field effect transistors
中文描述: 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 158K
代理商: FDS9934C
February 2004
2004 Fairchild Semiconductor Corporation
FDS9934C Rev C(W)
FDS9934C
Complementary
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1:
6.5 A, 20 V. R
DS(ON)
= 30 m
@ V
GS
= 4.5 V
R
DS(ON)
= 43 m
@ V
GS
= 2.5 V.
Q2:
–5 A, –20 V,R
DS(ON)
= 55 m
@ V
GS
= –4.5 V
R
DS(ON)
= 90 m
@ V
GS
= –2.5 V
S
D
SO-8
D
D
D
G
D1
D1
D2
D2
S1G1S2G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Ratings
Units
Parameter
Q1
20
±
10
6.5
20
Q2
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
–20
±12
V
V
A
– Continuous
– Pulsed
(Note 1a)
–5
–30
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
1.6
1
0.9
(Note 1b)
P
D
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
78
40
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
FDS9934C
Device
FDS9934C
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS9934C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDS9936 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
FDS9936A 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS9945 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS9945 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes