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參數(shù)資料
| 型號： | FDS3682 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 6A, 35mз |
| 中文描述： | 6 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 277K |
| 代理商： | FDS3682 |
2002 Fairchild Semiconductor Corporation
FDS3682 Rev. B
F
SABER Electrical Model
REV June 2002
template FDS3682 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=2.4e-12,nl=1.05,rs=6.0e-3,trs1=2.1e-3,trs2=4.7e-7,cjo=9.0e-10,m=0.57,tt=2.9e-8,xti=4.6)
dp..model dbreakmod = (rs=1.0,trs1=1.4e-3,trs2=-5e-5)
dp..model dplcapmod = (cjo=2.8e-10,isl=10e-30,nl=10,m=0.56)
m..model mmedmod = (type=_n,vto=3.65,kp=4.0,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.25,kp=50,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=3.05,kp=0.04,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4.0,voff=-2.0)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2.0,voff=-4.0)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.0,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1.0)
c.ca n12 n8 = 4.5e-10
c.cb n15 n14 = 5.75e-10
c.cin n6 n8 = 1.25e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 110.5
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 5.61e-9
l.ldrain n2 n5 = 1e-9
l.lsource n3 n7 = 1.98e-9
res.rlgate n1 n9 = 56.1
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 19.8
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.05e-3,tc2=-1.1e-8
res.rdrain n50 n16 = 10.0e-3, tc1=1.65e-2,tc2=3.8e-5
res.rgate n9 n20 = 1.8
res.rslc1 n5 n51 = 1e-6, tc1=4.4e-3,tc2=2.9e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 17.0e-3, tc1=1e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-5.55e-3,tc2=-1.2e-5
res.rvtemp n18 n19 = 1, tc1=-2.5e-3,tc2=1.0e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/85))** 2.5))
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS3682_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS3682_Q | 功能描述:MOSFET 100V 6a .35Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3690 | 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3692 | 功能描述:MOSFET 100V 4.5a .3 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3692 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
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