參數(shù)資料
型號: FDS3912
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 100V Dual N-Channel PowerTrench MOSFET
中文描述: 3 A, 100 V, 0.125 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 1/6頁
文件大?。?/td> 125K
代理商: FDS3912
October 2001
2001 Fairchild Semiconductor Corporation
FDS3912 Rev C2(W)
FDS3912
100V Dual N-Channel PowerTrench
ò
MOSFET
General Description
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
3 A, 100 V.
R
DS(ON)
= 125 m
@ V
GS
= 10 V
R
DS(ON)
= 135 m
@ V
GS
= 6 V
Fast switching speed
Low gate charge (14 nC typ)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Ratings
100
±
20
3
20
2
1.6
1.0
0.9
–55 to +175
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS3912
FDS3912
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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