參數(shù)資料
型號(hào)： FDS3682
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 100V, 6A, 35mз
中文描述： 6 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 277K
代理商： FDS3682
2002 Fairchild Semiconductor Corporation
FDS3682 Rev. B
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
A
= 25
°
C unless otherwise noted
0.01
0.1
1
10
100
1
10
100
200
300
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
10
μ
s
100ms
10ms
1s
100
μ
s
1ms
0.1
1
10
0.01
0.1
1
10
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
5
10
15
20
25
30
3.5
4.0
4.5
5.0
5.5
6.0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
5
10
15
20
25
30
0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
I
D
,
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 10V
30
32
34
36
38
40
1
2
3
4
5
6
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
D
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 6A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS3682_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS3682_Q 功能描述:MOSFET 100V 6a .35Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3690 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3692 功能描述:MOSFET 100V 4.5a .3 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3692 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
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