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參數(shù)資料
| 型號： | FDS3890 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 80V N-Channel Dual PowerTrench MOSFET |
| 中文描述： | 4.7 A, 80 V, 0.044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 85K |
| 代理商： | FDS3890 |
February 2001
FDS3890
80V N-Channel Dual PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDS3890 Rev B(W)
General Description
This
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
N-Channel
MOSFET
has
been
designed
Features
4.7 A, 80 V.
R
DS(ON)
= 44 m
@ V
GS
= 10 V
R
DS(ON)
= 50 m
@ V
GS
= 6 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S2
SO-8
G2S1G1
D2
D2
D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
80
±
20
4.7
20
2
1.6
1.0
0.9
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS3890
FDS3890
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS3912 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3992 | 功能描述:MOSFET 100V 4.5a .62 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3992 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3992_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз |
| FDS3992_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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