參數(shù)資料
型號(hào)： FDS3812
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 80V N-Channel Dual PowerTrench MOSFET
中文描述： 3.4 A, 80 V, 0.074 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 86K
代理商： FDS3812
May 2001
FDS3812
80V N-Channel Dual PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDS3812 Rev B1(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
N-Channel
MOSFET
has
been
designed
Features
3.4 A, 80 V.
R
DS(ON)
= 74 m
@ V
GS
= 10 V
R
DS(ON)
= 84 m
@ V
GS
= 6 V
Fast switching speed
Low gate charge (13nC typ)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S2
SO-8
G2S1G1
D2
D2
D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
80
±
20
3.4
20
2
1.6
1.0
0.9
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS3812
FDS3812
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料
PDF描述
FDS3890 80V N-Channel Dual PowerTrench MOSFET
FDS3912 100V Dual N-Channel PowerTrench MOSFET
FDS3992 N-Channel PowerTrench MOSFET 100V, 4.5A, 62mз
FDS4070N3 40V N-Channel PowerTrench MOSFET
FDS4070N7 40V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS3890 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3912 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3992 功能描述:MOSFET 100V 4.5a .62 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS3992 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
FDS3992_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
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