參數(shù)資料
型號(hào): FDP3632
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 100V, 80A, 9mз
中文描述: 12 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 267K
代理商: FDP3632
2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics
T
A
= 25
°
C unless otherwise noted
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
10000
0.1
1
10
100
C
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
0
20
40
60
80
100
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 50V
D
= 80A
I
D
= 40A
WAVEFORMS IN
DESI
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP3632_G 制造商:Fairchild 功能描述:TO-220,SINGLE,NCH,100V,99M OHM
FDP3632_NL 制造商:Fairchild 功能描述:100V/80A N-CH MOSFET
FDP3632_Q 功能描述:MOSFET 100V 80a .9 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP3651U 功能描述:MOSFET 100V 80A 15 OHM NCH POWER TREN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP3652 功能描述:MOSFET 100V 61a 0.016 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube