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參數(shù)資料
| 型號： | FDP3632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 80A, 9mз |
| 中文描述： | 12 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 267K |
| 代理商： | FDP3632 |
2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
A
= 25
°
C unless otherwise noted
0.1
1
10
100
1
10
100
200
400
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
OPEAREA MAY BE
10
μ
s
10ms
1ms
DC
100
μ
s
10
100
0.1
1
10
200
0.01
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If = (L)(I
0
30
60
90
120
150
3.0
3.5
4.0
4.5
5.0
5.5
6.0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
30
60
90
120
150
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 6V
6
7
8
9
10
0
20
40
62
80
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
D
)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=80A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP3632_G | 制造商:Fairchild 功能描述:TO-220,SINGLE,NCH,100V,99M OHM |
| FDP3632_NL | 制造商:Fairchild 功能描述:100V/80A N-CH MOSFET |
| FDP3632_Q | 功能描述:MOSFET 100V 80a .9 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3651U | 功能描述:MOSFET 100V 80A 15 OHM NCH POWER TREN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3652 | 功能描述:MOSFET 100V 61a 0.016 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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