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參數(shù)資料
| 型號： | FDB44N25 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 250V N溝道MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 722K |
| 代理商： | FDB44N25 |
2005 Fairchild Semiconductor Corporation
FDB44N25 Rev A
1
www.fairchildsemi.com
F
September 2005
UniFET
TM
FDB44N25
250V N-Channel MOSFET
Features
44A, 250V, R
DS(on)
= 0.069
@V
GS
= 10 V
Low gate charge ( typical 47 nC)
Low C
rss
( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
{
{
S
{
z
z
z
D
G
G
S
D
Symbol
Parameter
FDB44N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
44
26.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
176
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
2055
mJ
Avalanche Current
(Note 1)
44
A
Repetitive Avalanche Energy
(Note 1)
30.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
307
2.45
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
*
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case
--
0.41
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient*
--
40
Thermal Resistance, Junction-to-Ambient
--
62.5
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| FDB44N25TM | 功能描述:MOSFET 250V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDB52N20TM | 功能描述:MOSFET 200V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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