參數(shù)資料
型號: FDP4030L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: 20 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 99K
代理商: FDP4030L
March 1998
FDP4030L / FDB4030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
FDP4030L
FDB4030L
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current
- Continuous
(Note 1)
20
A
- Pulsed
(Note 1)
60
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
37.5
W
0.25
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-65 to 175
°C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
4
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
FDP4030L Rev.B1
20 A, 30 V. R
= 0.035
@ V
=10 V
R
DS(ON)
= 0.055
@ V
GS
=4.5V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC/DC converters and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
S
D
G
1998 Fairchild Semiconductor Corporation
相關PDF資料
PDF描述
FDB44N25 250V N-Channel MOSFET
FDB44N25TM 250V N-Channel MOSFET
FDB52N20 200V N-Channel MOSFET
FDB52N20TM 200V N-Channel MOSFET
FDB5680 60V N-Channel PowerTrench⑩ MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDP40G 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE
FDP40T 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE
FDP-40-T 功能描述:集管和線殼 40pos. DIP Plug .100 x .600 RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點類型:Pin (Male) 節(jié)距:1 mm 位置/觸點數(shù)量:16 排數(shù):1 安裝風格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點材料:Brass 觸點電鍍:Gold 制造商:Hirose Connector
FDP42AN15A0 功能描述:MOSFET 150V 35a .42 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP42AN15A0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET