參數(shù)資料
型號(hào)： FDMS9600S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N-Channel PowerTrench㈢ MOSFET
中文描述： 16 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, POWER 56, 8 PIN
文件頁數(shù)： 6/9頁
文件大?。?/td> 336K
代理商： FDMS9600S
F
M
FDMS9600S Rev.D
www.fairchildsemi.com
6
Typical Characteristics (Q2 SyncFET)
0.0
0.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
V
GS
= 6V
V
GS
= 3.5V
V
GS
=
4V
V
GS
= 4.5V
V
GS
=
3V
V
GS
= 10V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
I
D
,
Figure 12.
On-Region Characteristics
0
10
20
30
40
50
60
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
V
GS
=
4.5V
V
GS
=
10V
V
GS
=
6V
V
GS
=
3.5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
=3V
V
GS
=
4V
Figure 13.
Normalized on-Resistance v
S
Drain
Current and
Gate Voltage
Figure 14. Normalized On-Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 16A
V
GS
=10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
2
4
6
8
10
2
4
6
8
10
12
14
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 8A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 15. On-Resistance vs Gate to
Source Voltage
Figure 16. Transfer Characteristics
1.0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
50
60
V
DD
= 5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
=125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
I
D
,
Figure 17. Source to Drain Diode
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
60
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