參數(shù)資料
型號： FDMS9600S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N-Channel PowerTrench㈢ MOSFET
中文描述： 16 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, POWER 56, 8 PIN
文件頁數(shù)： 2/9頁
文件大?。?/td> 336K
代理商： FDMS9600S
F
M
FDMS9600S Rev.D
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 1mA, V
GS
= 0V
I
D
= 250
μ
A, referenced to 25°C
I
D
= 1mA, referenced to 25°C
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
35
29
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V, V
GS
= 0V
1
500
±100
±100
μ
A
I
GSS
Gate to Source Leakage Current
V
GS
= ±20V, V
DS
= 0V
nA
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= V
DS
, I
D
= 1mA
I
D
= 250
μ
A, referenced to 25°C
I
D
= 1mA, referenced to 25°C
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 10A
V
GS
= 10V, I
D
= 12A , T
J
= 125°C
V
GS
= 10V, I
D
= 16A
V
GS
= 4.5V, I
D
= 14A
V
GS
= 10V, I
D
= 16A , T
J
= 125°C
V
DD
= 10V, I
D
= 12A
V
DD
= 10V, I
D
= 16A
Q1
Q2
Q1
Q2
1
1
1.5
1.8
-4.5
-6.0
7.0
9.2
8.6
4.5
5.3
5.4
54
68
3
3
V
V
GS(th)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
mV/°C
r
DS(on)
Drain to Source On Resistance
Q1
8.5
12.4
13.0
5.5
7.0
8.3
m
Q2
g
FS
Forward Transconductance
Q1
Q2
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15V, V
GS
= 0V, f= 1MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1280
2300
525
1545
80
250
1.0
1.7
1705
3060
700
2055
120
375
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
pF
R
g
Gate Resistance
f = 1MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 10V, I
D
= 1A,
V
GS
= 10V, R
GEN
= 6
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
13
17
6
11
42
54
12
32
9
21
3
8
2.7
6.5
23
31
12
20
67
86
22
51
13
29
ns
t
r
Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Fall Time
ns
Q
g(TOT)
Total Gate Charge
Q1
V
DD
= 15V, V
GS
= 4.5V, I
D
= 12A
Q2
V
DD
= 15V, V
GS
= 4.5V, I
D
= 16A
nC
Q
gs
Gate to Source Gate Charge
nC
Q
gd
Gate to Drain “Miller” Charge
nC
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