參數(shù)資料
型號(hào): FDMS9600S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Dual N-Channel PowerTrench㈢ MOSFET
中文描述: 16 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, POWER 56, 8 PIN
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 336K
代理商: FDMS9600S
F
M
FDMS9600S Rev.D
www.fairchildsemi.com
5
Figure 7.
0
5
10
15
20
25
0
2
4
6
8
10
I
D
= 12A
V
DD
= 20V
V
DD
= 15V
V
DD
=10V
Q
g
, GATE CHARGE(nC)
V
G
,
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
2000
30
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
Capacitance vs Drain
to Source Voltage
Figure 9.
0.1
1
10
100
0.01
0.1
1
10
100
THIS AREA IS LIMITED
BY r
DS(ON)
DC
10s
1s
100ms
10ms
1ms
SINGLE PULSE
T
J
= MAX RATE
R
θ
JA
= 120
o
C/W
T
A
= 25
o
C
V
DS
, DRAIN to SOURCE VOLTAGE (V)
D
,
Forward Bias Safe
Operating Area
Figure 10.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
300
0.5
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 120
T
A
= 25
o
C
o
C/W
P
(
P
)
,
t, PULSE WIDTH (s)
Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
0.002
DUTY CYCLE-DESCENDING ORDER
N
I
θ
J
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
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