參數(shù)資料
型號(hào)： FDMS9600S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N-Channel PowerTrench㈢ MOSFET
中文描述： 16 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, POWER 56, 8 PIN
文件頁(yè)數(shù)： 4/9頁(yè)
文件大小： 336K
代理商： FDMS9600S
F
M
FDMS9600S Rev.D
www.fairchildsemi.com
4
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
V
GS
= 4V
V
GS
=
4.5V
V
GS
=
3.5V
V
GS
= 10V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= 3V
V
GS
= 6V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
10
20
30
40
50
60
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
V
GS
=
10V
V
GS
=
6V
V
GS
=
4V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
=3.5V
V
GS
= 3V
V
GS
=
4.5V
Normalized On-Resistance
Figure 3. Normalized On-Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
I
D
= 12A
V
GS
=10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
2
4
6
8
10
0
5
10
15
20
25
30
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 6A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.0
2.5
3.0
3.5
0
10
20
30
40
50
60
V
DD
= 5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
=125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
60
Source to Drain Diode
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