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參數(shù)資料
| 型號： | FDMS8680 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ |
| 中文描述： | 14 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 217K |
| 代理商： | FDMS8680 |
F
www.fairchildsemi.com
2
2007 Fairchild Semiconductor Corporation
FDMS8680 Rev.C
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
30
V
I
D
= 250
μ
A, referenced to 25°C
24
mV/°C
V
DS
= 24V, V
GS
= 0V
V
GS
= ±
20
V, V
DS
= 0V
1
±100
μ
A
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.8
3.0
V
I
D
= 250
μ
A, referenced to 25°C
-5.7
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 14A
V
GS
= 4.5V, I
D
= 11.5A
V
GS
= 10V, I
D
= 14A, T
J
= 125°C
V
DD
= 10V, I
D
= 14A
5.5
8.5
8.2
72
7.0
11.0
10.5
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
1195
555
95
0.8
1590
740
145
4.0
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Gate to Source Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= 15V, I
D
= 14A,
V
GS
= 10V, R
GEN
= 6
9
3
18
10
34
10
26
14
ns
ns
ns
ns
nC
nC
nC
nC
21
2
18
10
3.2
2.7
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 15V,
I
D
= 14A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
V
GS
= 0V, I
S
= 14A (Note 2)
0.8
27
15
1.2
44
27
V
ns
nC
I
F
= 14A, di/dt = 100A/
μ
s
NOTES:
1. R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3. Starting T
J
= 25°C, L = 3mH, I
AS
= 12A, V
DD
= 30V, V
GS
= 10V.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
a.
50°C/W when mounted on a
1in
pad of 2 oz copper.
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