參數(shù)資料
型號： FDMS8672AS
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ SyncFET 30V, 28A, 5.0mヘ
中文描述： 18 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, POWER 56, 8 PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 250K
代理商： FDMS8672AS
F
T
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDMS8672AS Rev.B2
Figure 7.
0
5
10
15
20
25
30
0
2
4
6
8
10
I
D
= 18A
V
DD
= 15V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
30
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
5000
50
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
30
500
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
0
20
40
60
80
100
R
θ
JC
= 1.8
o
C/W
V
GS
= 10V
V
GS
= 4.5V
I
D
,
D
T
C
,
CASE TEMPERATURE
(
o
C
)
Limited by Package
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
100
μ
s
DC
10s
1s
100ms
10ms
1ms
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
300
Figure 12.
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
0
10
1
10
2
10
3
1
10
100
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.5
V
GS
= 10V
P
(
P
)
,
P
500
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
相關(guān)PDF資料
PDF描述
FDMS8672S N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
FDMS8674 Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
FDMS8680 N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ
FDMS8690_07 N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
FDMS8690 N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS8672S 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8674 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8674_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 21A, 5.0mヘ
FDMS8680 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8690 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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