參數(shù)資料
型號(hào)： FDMS8672AS
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ SyncFET 30V, 28A, 5.0mヘ
中文描述： 18 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, POWER 56, 8 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 250K
代理商： FDMS8672AS
tm
November 2007
2007 Fairchild Semiconductor Corporation
FDMS8672AS Rev.B2
www.fairchildsemi.com
1
F
T
FDMS8672AS
N-Channel PowerTrench
SyncFET
TM
30V, 28A, 5.0m
Features
Max r
DS(on)
= 5.0m
at V
GS
= 10V, I
D
= 18A
Max r
DS(on)
= 7.0m
at V
GS
= 4.5V, I
D
= 15A
Advanced Package and Silicon combination
for low r
DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8672AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
28
99
18
200
253
70
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 2)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
1.8
50
°C/W
Device Marking
FDMS8672AS
Device
FDMS8672AS
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
4
3
2
1
5
6
7
8
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
D
D
D
D
G
S
S
S
相關(guān)PDF資料
PDF描述
FDMS8672S N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
FDMS8674 Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
FDMS8680 N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ
FDMS8690_07 N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
FDMS8690 N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS8672S 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8674 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8674_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 21A, 5.0mヘ
FDMS8680 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8690 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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