參數(shù)資料
型號: FDMS8672AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ SyncFET 30V, 28A, 5.0mヘ
中文描述: 18 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, POWER 56, 8 PIN
文件頁數(shù): 6/8頁
文件大?。?/td> 250K
代理商: FDMS8672AS
F
T
www.fairchildsemi.com
6
2007 Fairchild Semiconductor Corporation
FDMS8672AS Rev.B2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8672AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
D
,
V
, REVERSE VOLTAGE (V)
Typical Characteristics
(continued)
Figure 14. FDMS8672AS SyncFET Body Diode
Reverse Recovery Characteristics
Figure 15. SyncFET Body Diode Reverse Leakage
vs Drain to Source Voltage
-30
-15
0
15
30
45
-4
-3
-2
-1
0
1
2
3
4
5
C
TIME (ns)
相關PDF資料
PDF描述
FDMS8672S N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
FDMS8674 Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
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相關代理商/技術參數(shù)
參數(shù)描述
FDMS8672S 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8674 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8674_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 21A, 5.0mヘ
FDMS8680 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8690 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube