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參數(shù)資料
| 型號： | FDMS8670S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench SyncFETTM |
| 中文描述： | 20 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 237K |
| 代理商： | FDMS8670S |
F
S
T
FDMS8670S Rev.C1
www.fairchildsemi.com
6
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS8670S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics
(continued)
Figure 14. FDMS8670S SyncFET Body
Diode reverse recovery characteristics
0
0
0
5
5
10
10
15
15
20
20
25
25
30
30
1E-5
1E-4
1E-3
0.01
0.1
T
o
C
T
J
= = 125
o
C
I
D
,
VDS, REVERSE VOLTAGE (V)
DS
T
o
C
Figure 15. SyncFET Body Diode reverse
leakage vs drain to source voltage
5
10
15
20
25
30
T
A
= 125
o
C
T
A
= 100
o
C
T
A
= 25
o
C
I
o
C
o
C
T
J
= 25
o
C
I
D
,
TIME: 12.5nS/Div
C
相關PDF資料 |
PDF描述 |
|---|---|
| FDMS8672AS | N-Channel PowerTrench㈢ SyncFET 30V, 28A, 5.0mヘ |
| FDMS8672S | N-Channel PowerTrench SyncFET 30V, 35A, 5mohm |
| FDMS8674 | Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP |
| FDMS8680 | N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS8670S_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз |
| FDMS8670S_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM |
| FDMS8672AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8672S | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8674 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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