參數(shù)資料
型號： FDMS8670S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench SyncFETTM
中文描述： 20 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 237K
代理商： FDMS8670S
F
S
T
FDMS8670S Rev.C1
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g(TOT)
Total Gate Charge at 10V
Q
g(4.5V)
Total Gate Charge at 4.5V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 1mA, V
GS
= 0V
30
V
I
D
= 50mA, referenced to 25°C
17
mV/°
C
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
500
±100
μ
A
nA
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 1mA
1
1.5
3
V
I
D
= 50mA, referenced to 25°C
-2.8
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 17A
V
GS
= 10V, I
D
= 20A ,T
J
= 125°C
V
DS
= 10V, I
D
= 20A
2.8
3.6
3.9
98
3.5
5.0
6.0
m
Ω
g
FS
Forward Transconductance
S
V
DS
= 15V, V
GS
= 0V
f = 1MHz
3005
865
320
1.4
4000
1150
480
5.0
pF
pF
pF
Ω
f = 1MHz
V
DD
= 15V, I
D
= 20A
V
GS
= 10V, R
GEN
= 5
Ω
14
19
37
10
52
24
8
10
26
35
60
20
73
34
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 4.5V
V
DS
= 15V
I
D
= 20A
V
GS
= 0V, I
S
= 2A
0.4
26
24
0.7
42
39
V
ns
nC
I
F
= 20A, di/dt = 300A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse time < 300
μ
s, Duty cycle < 2%.
a. 50°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
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