參數(shù)資料
型號: FDMS8670S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench SyncFETTM
中文描述: 20 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 237K
代理商: FDMS8670S
F
S
T
FDMS8670S Rev.C1
www.fairchildsemi.com
4
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
0
10
20
30
40
50
60
0
2
4
6
8
10
V
DD
= 20V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 15V
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
5000
30
0.01
0.1
1
10
100
1000
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
40
25
50
T
C
, CASE TEMPERATURE
(
75
100
125
150
0
20
40
60
80
100
120
Limited by Package
R
θ
JC
= 1.6
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
o
C
)
0.1
1
10
1E-3
0.01
0.1
1
10
100
1s
DC
10s
100ms
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
O
C
I
D
,
VDS, DRAIN to SOURCE VOLTAGE (V)
80
300
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
0.6
500
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
-----------------------
T
A
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